1 C3D04065E silicon carbide schottky diode z -r ec ? r ectifier features ? 650-volt schottky rectifer ? optimized for pfc boost diode application ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction - typical pfc p out : 400w-600w package to-252-2 maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc blocking voltage 650 v i f forward continuous current 15.5 7.5 4 a t c =25?c t c =135?c t c =155?c i frm repetitive peak forward surge current 22 17 a t c =25?c, t p =10 ms, half sine wave d=0.3 t c =110?c, t p =10 ms, half sine wave d=0.3 i fsm non-repetitive peak forward surge current 31.9 28.5 a t c =25?c, t p =10 ms, half sine wave d=0.3 t c =110?c, t p =10 ms, half sine wave d=0.3 i fsm non-repetitive peak forward surge current 110 a t c =25?c, t p =10 s, pulse p tot power dissipation 75 32.5 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c part number package marking C3D04065E to-252-2 c3d04065 pin 1 pin 2 case v rrm = 650 v i f ( t c =135?c) = 7.5 a q c = 8.5 nc C3D04065E rev. -
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 1.8 1.8 2.4 v i f = 4 a t j =25c i f = 4 a t j =175c i r reverse current 12 24 60 120 a v r = 650 v t j =25c v r = 650 v t j =175c q c total capacitive charge 8.5 nc v r = 650 v, i f = 4a d i /d t = 500 a/ s t j = 25c c total capacitance 251 22 21 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 2.02 c/w typical performance 6 7 8 9 10 reverse current (ua) to-220 4a series1 0 1 2 3 4 5 0 100 200 300 400 500 600 700 800 i r reverse current (ua) v r reverse voltage (v) series2 series3 series4 figure 1. forward characteristics figure 2. reverse characteristics 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f forward current (a) v f forward (v) current(a) series2 series3 series4 t j = 25c t j = 75c t j = 125c t j = 175c i f forward current (a) v f forward voltage (v) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 t j = 25c t j = 75c t j = 125c t j = 175c i r reverse current ( a) v r reverse voltage (v) C3D04065E rev. -
3 figure 3. current derating figure 5. transient thermal impedance figure 4. capacitance vs. reverse voltage typical performance i f(peak) peak forward current (a) t c case temperature (c ) 25 50 75 100 125 150 175 40 35 30 25 20 15 10 5 0 20% duty* 30% duty* 50% duty* 70% duty* dc 0 20 40 60 80 100 120 140 1 10 100 1000 c capacitance (pf) v r reverse voltage (v) "d2_4a_to-220" "d2_4a_to-220" 140 120 100 80 60 40 20 0 1 10 100 1000 c capacitance (pf) v r reverse voltage (v) time (s) zth (c/w) C3D04065E rev. -
4 typical performance 80 70 60 50 40 30 20 10 0 power dissipation (w) t c case temperature (c ) 25 50 75 100 125 150 175 figure 6. power derating 40.0 50.0 60.0 70.0 80.0 power dissipation (w) 0.0 10.0 20.0 30.0 25 50 75 100 125 150 175 power dissipation (w) t c case temperature (c) pos inches millimeters min max min max a .250 .289 6.350 7.341 b .197 .215 5.004 5.461 c .027 .050 .686 1.270 d* .270 .322 6.858 8.179 e .178 .182 4.521 4.623 f .025 .045 .635 1.143 g 44? 46? 44? 46? h .380 .410 9.652 10.414 j .090 typ 2.286 typ k 6? 8? 6? 8? l .086 .094 2.184 2.388 m .018 .034 .457 .864 n .035 .050 .889 1.270 p .231 .246 5.867 6.248 q 0.00 .005 0.00 .127 r r0.010 typ r0.254 typ s .017 .023 .432 .584 t .038 .045 .965 1.143 u .021 .029 .533 .737 package dimensions package to-252-2 note: * tab d may not be present * C3D04065E rev. -
5 recommended solder pad layout part number package marking C3D04065E to-252-2 c3d04065 to-252-2 diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t +if*r t v t = 0.98+(t j * -1.8*10 -3 ) r t = 0.10+(t j * 9.16*10 -4 ) 0.08 note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C3D04065E rev. -
6 6 C3D04065E rev. - copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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